SURFACE PROCESSES DURING HETEROEPITAXY OF ZNSE ON GAAS(111)A AS OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

Authors
OHTAKE A MIWA S KUO LH KIMURA K YASUDA T JIN CG YAO T
Citation
A. Ohtake et al., SURFACE PROCESSES DURING HETEROEPITAXY OF ZNSE ON GAAS(111)A AS OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Physical review. B, Condensed matter, 56(23), 1997, pp. 14909-14912
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
23
Year of publication
1997
Pages
14909 - 14912
Database
ISI
SICI code
0163-1829(1997)56:23<14909:SPDHOZ>2.0.ZU;2-S
Abstract
Reflection high-energy electron diffraction and (RHEED) and x-ray-phot oelectron spectroscopy have been used to study dynamical growth proces ses of ZnSe on GaAs(111)A-(2x2). ZnSe heteroepitaxially grows in a bia tomic layer-by-layer mode with the(111)A orientation, being accompanie d by distinct RHEED intensity oscillations. The growth rate of ZnSe in creases and decreases with increasing Se/Zn flux ratio and ZnSe film t hickness, respectively. We have found a strong dependence of the growt h rate on chemical composition of the growing ZnSe surface.