PHOTOEXCITED CARRIER DIFFUSION NEAR A SI(111) SURFACE - NONNEGLIGIBLECONSEQUENCE OF CARRIER-CARRIER SCATTERING

Authors
LI CM SJODIN T DAI HL
Citation
Cm. Li et al., PHOTOEXCITED CARRIER DIFFUSION NEAR A SI(111) SURFACE - NONNEGLIGIBLECONSEQUENCE OF CARRIER-CARRIER SCATTERING, Physical review. B, Condensed matter, 56(23), 1997, pp. 15252-15255
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
23
Year of publication
1997
Pages
15252 - 15255
Database
ISI
SICI code
0163-1829(1997)56:23<15252:PCDNAS>2.0.ZU;2-9
Abstract
Photocarrier diffusion in Si at ambient temperature in the carrier den sity range of 4x10(17) to 4 x 10(19) cm(-3) has been characterized by the transient grating technique. Measurements show a strong density de pendence in ambipolar diffusivity with a minimum of 4.7 cm(2) s(-1), a factor of 4 lower than the intrinsic value, at 10(19) cm(-3). The dec rease is a result of carrier-carrier scattering at high densities. Mea surements on both a Si(111) surface (reflection geometry) and a Si fil m (transmission geometry) indicate that there is no significant surfac e effect in diffusivity for carriers generated near the surface.