TIN DIOXIDE SOL-GEL DERIVED THAN FILMS DEPOSITED ON POROUS SILICON

Undoped and Sb-doped SnO2 sol-gel derived thin films have been prepare d for the first time from tin (IV) ethoxide precursor and SbCl3 in ord er to be utilised for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent lavers were obtained on different types of substrates (Si, SiO2/Si). The evolutio n of the Sn-O chemical bonds in the SnO2 during film consolidation tre atments was monitored by infrared spectroscopy. By energy dispersive X -ray spectroscopy performed on the cross section of the porosified sil icon coupled with transmission electron microscopy, the penetration of the SnO2 sol-gel derived films in the nanometric pores of the porous silicon has been experimentally proved. (C) 1997 Elsevier Science S.A.