ELECTRICAL-PROPERTIES AND RADIATION HARDNESS OF SOI SYSTEMS WITH MULTILAYER BURIED DIELECTRIC

In this work SOI structures with buried SiO2-Si3N4-SiO2 layers have be en fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the. buried dielectric layer, To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtain ed results were compared with electrical measurements, It is shown tha t optimization of the preparation processes of the initial buried diel ectric layers provides ZMR SOI structures with multilayer buried isola tion, which are of high quality for both Si film interfaces, Particula r attention is paid to the investigation of radiation-induced charge:t rapping in buried insulators, Buried isolation structures with a nitri de layer exhibit significant reduction of radiation-induced positive c harge as compared to classical buried SiO2 layers produced by either t he ZMR of the SIMOX technique.