Plasma source ion implantation (PSII) has been developed as an alterna
tive technique to circumvent the limitations of conventional ion impla
ntation. such as the requirements of complicated target handling and b
eam raster systems for a uniform ion implantation of three-dimensional
samples. By applying negative high voltage pulses, positively charged
ions are accelerated to and implanted into the target. The plasma she
ath expansion and ion doses, calculated with a theoretical model, are
in good agreement with the experimentally obtained data. As the analyt
ical model describes the experimental data sufficiently, it is used to
discuss design specifications for PSII systems. Furthermore, the poss
ibility of implanting ions into large, three-dimensional samples is di
scussed on the basis of predictions of the analytical model. The resul
ts of nitrogen PSII treatment of planar samples are shown. Wear and ha
rdness of the implanted and unimplanted flat steel samples with a high
chromium content were measured. An increased hardness as well as a de
creased wear was obtained. (C) 1997 Elsevier Science S.A.