A NOVEL-APPROACH FOR DETERMINING THE GAAS-MESFET SMALL-SIGNAL EQUIVALENT-CIRCUIT ELEMENTS

A simple way of extracting the small-signal equivalent circuit of a ME SFET is proposed. The intrinsic elements and one of the extrinsic para meters are described as functions of the remaining extrinsic parameter s. This drastically reduces the search space and the number of unknown s for optimization. It provides an important new insight into the corr elation between the various extrinsic and intrinsic parameters. The me thod also reveals that there are two sets of solution for the paramete rs R-s and L-s which can fully satisfy the global solution. A numerica l comparison in terms of both accuracy and speed between the proposed method and some conventional methods on a 400-mu m gatewidth GaAs MESF ET is presented.