QUANTITATIVE MODEL OF RADIATION-INDUCED CHARGE TRAPPING IN SIO2

Authors
CONLEY JF LENAHAN PM WALLACE BD COLE P
Citation
Jf. Conley et al., QUANTITATIVE MODEL OF RADIATION-INDUCED CHARGE TRAPPING IN SIO2, IEEE transactions on nuclear science, 44(6), 1997, pp. 1804-1809
Citations number
35
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
1804 - 1809
Database
ISI
SICI code
0018-9499(1997)44:6<1804:QMORCT>2.0.ZU;2-B
Abstract
A predictive model of radiation induced oxide charging, based on stati stical thermodynamics and electron spin resonance measurements of defe cts known as E' centers, has been developed. The model is successfully tested on Co-60 irradiated MOSFETs.