A STUDY OF CHARGE TRAPPING IN PECVD PTEOS FILMS

Authors
LENAHAN PM BILLMAN CA FULLER R EVANS H SPEECE WH DECOSTA D LOWRY R
Citation
Pm. Lenahan et al., A STUDY OF CHARGE TRAPPING IN PECVD PTEOS FILMS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1834-1839
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
1834 - 1839
Database
ISI
SICI code
0018-9499(1997)44:6<1834:ASOCTI>2.0.ZU;2-O
Abstract
We have studied charge trapping in tetraethylorthosilicate (TEOS) base d phosphorous doped silicon glass (PSG) films deposited by plasma enha nced chemical vapor deposition (PECVD) using electron spin resonance a nd capacitance voltage measurements. The results indicate that these f ilms trap electrons and holes very well. The charges appear to be trap ped in phosphorus and carbon related centers as well as in E' centers. The carbon related centers are unique to the TEOS films.