THE EFFECT OF EMITTER JUNCTION BIAS ON THE LOW DOSE-RATE RADIATION RESPONSE OF BIPOLAR-DEVICES

Authors
PERSHENKOV VS MASLOV VB CHEREPKO SV SHVETZOVSHILOVSKY IN BELYAKOV VV SOGOYAN AV RUSANOVSKY VI ULIMOV VN EMELIANOV VV NASIBULLIN VS
Citation
Vs. Pershenkov et al., THE EFFECT OF EMITTER JUNCTION BIAS ON THE LOW DOSE-RATE RADIATION RESPONSE OF BIPOLAR-DEVICES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1840-1848
Citations number
20
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
1840 - 1848
Database
ISI
SICI code
0018-9499(1997)44:6<1840:TEOEJB>2.0.ZU;2-#
Abstract
It is shown that emitter-base junction bias is significant for low dos e rate irradiation response of npn and pnp bipolar transistors. The ef fect is more pronounced for pnp transistor. Experimental results are e xplained in terms of fringing electric field model. The role of fringi ng field is confirmed by the radiation induced charge neutralization e xperiment. The experimental results on the effect of emitter junction bias on the elevated temperature high dose rate irradiation of bipolar devices and its application for low dose rate response simulation are discussed.