INTEGRITY OF III-V HETEROJUNCTION INTERFACES UNDER GAMMA-IRRADIATION

Authors
SUBRAMANIAN S SARKAR A UNGIER L GOODNICK SM
Citation
S. Subramanian et al., INTEGRITY OF III-V HETEROJUNCTION INTERFACES UNDER GAMMA-IRRADIATION, IEEE transactions on nuclear science, 44(6), 1997, pp. 1862-1869
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
1862 - 1869
Database
ISI
SICI code
0018-9499(1997)44:6<1862:IOIHIU>2.0.ZU;2-O
Abstract
Reliability of modern III-V semiconductor heterostructure devices mean t for strong radiation environment depends upon the integrity of the h etero-interfaces under radiation. In this paper, we present some resul ts of our investigation of a variety of heterojunction structures subj ected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements.