200 MEV PROTON DAMAGE EFFECTS ON MULTIQUANTUM-WELL LASER-DIODES

Authors
ZHAO YF PATWARY AR SCHRIMPF RD NEIFELD MA GALLOWAY KF
Citation
Yf. Zhao et al., 200 MEV PROTON DAMAGE EFFECTS ON MULTIQUANTUM-WELL LASER-DIODES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1898-1905
Citations number
17
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
1898 - 1905
Database
ISI
SICI code
0018-9499(1997)44:6<1898:2MPDEO>2.0.ZU;2-L
Abstract
200 MeV proton damage effects on multi-quantum well GaAs/GaAlAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60x10(-15) cm(2)/p for different bias conditions and from 1. 52 to 3.58x10(-15) cm(2)/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quan tify the degradation of optical power. Preliminary annealing effects a re also presented. The annealing effects are greater for devices short ed during irradiation than for those biased at I-bias=35mA.