IMPLEMENTATION OF TOTAL-DOSE EFFECTS IN THE BIPOLAR JUNCTION TRANSISTOR GUMMEL-POON MODEL

The effects of total dose on the SPICE model of bipolar junction trans istors are investigated. The limitations of the standard Gummel-Poon m odel for simulating the radiation-induced excess base current are anal yzed, and a new model based on an empirical approach is proposed. Four new SPICE rad-parameters are presented, and investigated for differen t dose rates. The relevant parameters are extracted using a new algori thmic procedure, combining a genetic approach and the standard optimiz ation technique which minimizes the RMS error between measured and sim ulated excess base current. It is shown that the excess base current i s accurately described by the same formula whatever the device type is . An empirical fitting of the rad-parameters as a function of total do se is proposed to use in hardening electronic circuits for space-like environments.