CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS

Citation
O. Flament et al., CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1930-1938
Citations number
19
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
1930 - 1938
Database
ISI
SICI code
0018-9499(1997)44:6<1930:CAOREI>2.0.ZU;2-C
Abstract
We have performed current-voltage and charge pumping measurements on L OGOS parasitic transistors submitted to x-ray irradiation. The electri cal behavior and the charge pumping response of these non-planar struc tures have been analyzed by two-dimensional computer simulations. We r eport how this experimental approach allows us to obtain quantitative information about oxide charge and interface trap densities in differe nt parts of the complete structure. Our results show a maximum of oxid e charge trapping and interface trap buildup in the bird's beak region s after irradiation. The generation of radiation-induced interface and border traps along the LOGOS SiO2/Si interface is discussed, in terms of trap density and frequency response.