O. Flament et al., CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1930-1938
We have performed current-voltage and charge pumping measurements on L
OGOS parasitic transistors submitted to x-ray irradiation. The electri
cal behavior and the charge pumping response of these non-planar struc
tures have been analyzed by two-dimensional computer simulations. We r
eport how this experimental approach allows us to obtain quantitative
information about oxide charge and interface trap densities in differe
nt parts of the complete structure. Our results show a maximum of oxid
e charge trapping and interface trap buildup in the bird's beak region
s after irradiation. The generation of radiation-induced interface and
border traps along the LOGOS SiO2/Si interface is discussed, in terms
of trap density and frequency response.