EXPERIMENTAL VALIDATION OF AN ACCELERATED METHOD OF OXIDE-TRAP-LEVEL CHARACTERIZATION FOR PREDICTING LONG-TERM THERMAL EFFECTS IN METAL-OXIDE-SEMICONDUCTOR DEVICES

A new method for accelerated prediction of the longterm thermal anneal ing of bulk oxide trapped charge in the low dose rate space environmen t was presented in a previous paper. This method based on the thermal detrapping characteristics is briefly reviewed. From a single experime ntal isochronal curve, the long term isothermal behavior of the device is predicted and compared with an experimental isothermal curve. Four different devices, obtained from four different manufacturers. were e xamined to demonstrate the validity of this method. In all four cases, the predicted long-term thermal behavior is in good agreement with ex perimental results. This method's application is discussed for space m issions.