REDUCTION OF RADIATION-INDUCED BACK CHANNEL THRESHOLD VOLTAGE SHIFTS IN PARTIALLY DEPLETED SIMOX CMOS DEVICES BY USING ADVANTOX(TM) SUBSTRATES

Authors
LIU ST ALLEN LP ANC MJ JENKINS WC HUGHES HL TWIGG ME LAWRENCE RK
Citation
St. Liu et al., REDUCTION OF RADIATION-INDUCED BACK CHANNEL THRESHOLD VOLTAGE SHIFTS IN PARTIALLY DEPLETED SIMOX CMOS DEVICES BY USING ADVANTOX(TM) SUBSTRATES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2101-2105
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
2101 - 2105
Database
ISI
SICI code
0018-9499(1997)44:6<2101:RORBCT>2.0.ZU;2-J
Abstract
Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS tr ansistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOX(TM) substrates.