St. Liu et al., REDUCTION OF RADIATION-INDUCED BACK CHANNEL THRESHOLD VOLTAGE SHIFTS IN PARTIALLY DEPLETED SIMOX CMOS DEVICES BY USING ADVANTOX(TM) SUBSTRATES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2101-2105
Excessive total dose radiation induced back channel threshold voltage
shifts often observed in fully depleted and partially depleted NMOS tr
ansistors fabricated in full dose SIMOX wafers can be greatly reduced
by use of new low dose ADVANTOX(TM) substrates.