THE RADIATION RESPONSE OF CAPACITORS FABRICATED ON BONDED SILICON-ON-INSULATOR SUBSTRATES

Silicon-on-insulator substrates were manufactured by bonding a thermal oxide of silicon to a silicon wafer. Metal-oxide-silicon capacitors w ere fabricated on these substrates. Capacitors were also fabricated on unbonded thermal oxides. Capacitance-voltage measurements were perfor med on the bonded and unbonded oxides, before and after 10 keV x-ray i rradiation. The flatband shift for the irradiated bonded oxide was nea rly double that of the irradiated unbonded oxide. The radiation-induce d shifts of the capacitance-voltage curves are shown to be related to the density differences between the bonded and unbonded oxides.