Pj. Mcmarr et al., THE RADIATION RESPONSE OF CAPACITORS FABRICATED ON BONDED SILICON-ON-INSULATOR SUBSTRATES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2115-2123
Silicon-on-insulator substrates were manufactured by bonding a thermal
oxide of silicon to a silicon wafer. Metal-oxide-silicon capacitors w
ere fabricated on these substrates. Capacitors were also fabricated on
unbonded thermal oxides. Capacitance-voltage measurements were perfor
med on the bonded and unbonded oxides, before and after 10 keV x-ray i
rradiation. The flatband shift for the irradiated bonded oxide was nea
rly double that of the irradiated unbonded oxide. The radiation-induce
d shifts of the capacitance-voltage curves are shown to be related to
the density differences between the bonded and unbonded oxides.