TOTAL-DOSE AND SEU CHARACTERIZATION OF 0.25 MICRON CMOS SOI INTEGRATED-CIRCUIT MEMORY TECHNOLOGIES/

Authors
BROTHERS C PUGH R DUGGAN P CHAVEZ J SCHEPIS D YEE D WU S
Citation
C. Brothers et al., TOTAL-DOSE AND SEU CHARACTERIZATION OF 0.25 MICRON CMOS SOI INTEGRATED-CIRCUIT MEMORY TECHNOLOGIES/, IEEE transactions on nuclear science, 44(6), 1997, pp. 2134-2139
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
2134 - 2139
Database
ISI
SICI code
0018-9499(1997)44:6<2134:TASCO0>2.0.ZU;2-7
Abstract
Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research fou ndry in un-hardened bulk and unhardened partially-depleted SOI silicon , are reported. The design and fabrication process, were optimized for highperformance and short access time using supply voltages of 2.5v f or the 64K-bit and 1.8v for the 144K and 288K-bit test macro SRAMs.