CHARGE COLLECTION AND SEU FROM ANGLED ION STRIKES

Charge collection and SEU from angled ion strikes are studied using th ree-dimensional simulation. The physics of charge collection in unload ed diodes and transistors is explored, as is the angular dependence of upset threshold in CMOS SRAMs. The simulation results are compared to analytical models for charge collection. Modeling fundamental transpo rt in SRAMs, the true effective LET relationship is computed and used to analyze experimental heavy-ion data. Impacts on SEU test methodolog y are discussed.