SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY

Authors
DETCHEVERRY C DACHS C LORFEVRE E SUDRE C BRUGUIER G PALAU JM GASIOT J ECOFFET R
Citation
C. Detcheverry et al., SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY, IEEE transactions on nuclear science, 44(6), 1997, pp. 2266-2273
Citations number
17
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
2266 - 2273
Database
ISI
SICI code
0018-9499(1997)44:6<2266:SCCASA>2.0.ZU;2-F
Abstract
This work(dagger) presents SEU phenomena in advanced SRAM memory cells . Using mixed-mode simulation, the effects of scaling on the notions o f sensitive area and critical charge is shown. Specifically, we quanti fy the influence of parasitic bipolar action in cells fabricated in a submicron technology.