EFFECTS OF LOW-TEMPERATURE BUFFER-LAYER THICKNESS AND GROWTH TEMPERATURE ON THE SEE SENSITIVITY OF GAAS HIGFET CIRCUITS

Authors
WEATHERFORD TR MARSHALL PW MARSHALL CJ FOUTS DJ MATHES B LAMACCHIA M
Citation
Tr. Weatherford et al., EFFECTS OF LOW-TEMPERATURE BUFFER-LAYER THICKNESS AND GROWTH TEMPERATURE ON THE SEE SENSITIVITY OF GAAS HIGFET CIRCUITS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2298-2305
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
2298 - 2305
Database
ISI
SICI code
0018-9499(1997)44:6<2298:EOLBTA>2.0.ZU;2-6
Abstract
Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temp erature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitiv ity in GaAs HIGFET circuits.