HEAVY-ION-INDUCED FAILURES IN A POWER IGBT

Authors
LORFEVRE E DACHS C DETCHEVERRY C PALAU JM GASIOT J ROUBAUD F CALVET MC ECOFFET R
Citation
E. Lorfevre et al., HEAVY-ION-INDUCED FAILURES IN A POWER IGBT, IEEE transactions on nuclear science, 44(6), 1997, pp. 2353-2357
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
2353 - 2357
Database
ISI
SICI code
0018-9499(1997)44:6<2353:HFIAPI>2.0.ZU;2-W
Abstract
Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investig ation shows that latchup is involved in the triggering of the device.