NEUTRON-INDUCED SINGLE EVENT BURNOUT IN HIGH-VOLTAGE ELECTRONICS

Citation
E. Normand et al., NEUTRON-INDUCED SINGLE EVENT BURNOUT IN HIGH-VOLTAGE ELECTRONICS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2358-2366
Citations number
21
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
44
Issue
6
Year of publication
1997
Part
1
Pages
2358 - 2366
Database
ISI
SICI code
0018-9499(1997)44:6<2358:NSEBIH>2.0.ZU;2-U
Abstract
Energetic neutrons with an atmospheric neutron spectrum, which were de monstrated to induce single event burnout in power MOSFETs, have been Shown to induce burnout in high voltage (>3000V) electronics when oper ated at voltages as low as 50% of rated voltage. The laboratory failur e rates correlate well with field failure rates measured in Europe.