THALLIUM-CONTAINING AND MERCURY-CONTAINING CUPRATES IN ELECTRONIC DEVICES

Citation
Zg. Ivanov et Lg. Johansson, THALLIUM-CONTAINING AND MERCURY-CONTAINING CUPRATES IN ELECTRONIC DEVICES, Superconductor science and technology, 10(12), 1997, pp. 896-900
Citations number
12
ISSN journal
09532048
Volume
10
Issue
12
Year of publication
1997
Pages
896 - 900
Database
ISI
SICI code
0953-2048(1997)10:12<896:TAMCIE>2.0.ZU;2-Y
Abstract
Results on the synthesis of Tl-and Hg-based thin films featuring diffe rent numbers of CuO2 planes are presented. At optimal annealing condit ions T-c of 108 K and 92 K were achieved for Tl-2212 and Tl-2201 films , respectively. Tl-2201 films can be grown with orthorhombic or tetrag onal structure depending mainly on the TI content. Bicrystal and step- edge weak links were fabricated in Tl-2212 films with T-c ranging from 105 to 109 K. The weak links were studied and applied in do SQUIDS. M icrowave resonators with a microstrip configuration was designed and u sed in oscillators at 12 GHz frequency.