THIN YBCO FILMS ON NDGAO3(001) SUBSTRATES GROWN BY INJECTION MOCVD

Citation
A. Abrutis et al., THIN YBCO FILMS ON NDGAO3(001) SUBSTRATES GROWN BY INJECTION MOCVD, Superconductor science and technology, 10(12), 1997, pp. 959-965
Citations number
25
ISSN journal
09532048
Volume
10
Issue
12
Year of publication
1997
Pages
959 - 965
Database
ISI
SICI code
0953-2048(1997)10:12<959:TYFONS>2.0.ZU;2-5
Abstract
YBCO thin (about 0.2 mu m) films were deposited at 825 degrees C on Nd GaO3 (001) by single-source injection CVD. Precisely controlled microa mounts of organometallic beta-diketonates dissolved in an organic solv ent were injected sequentially into the evaporator by means of a compu ter-driven injector and the resultant vapour was transported into the deposition zone. The influence of the vapour phase composition on film s' properties was investigated. A mixture of a(perpendicular to)- and c(perpendicular to)-oriented YBCO crystallites exists in all deposited films and its ratio depends on the vapour phase composition. For both a and c perpendicular crystallites only 45 degrees in-plane orientati on with respect to substrate axes was found. Bidirectional twinning wa s established in the crystallites of both types. T-c of the films (abo ut 90 K) was almost independent of the vapour phase composition in the studied range. However, the critical current density J(c) depended cl early on the vapour phase composition in relation to the c(perpendicul ar to):a(perpendicular to) ratio variation. J(c) of the films varied i n the range (0.2-5.0) x 10(6) A cm(-2).