Dl. Ingram et al., A 6-W KA-BAND POWER MODULE USING MMIC POWER-AMPLIFIERS, IEEE transactions on microwave theory and techniques, 45(12), 1997, pp. 2424-2430
This paper presents the development of a 6-W 24% power-added efficienc
y (PAE) K a-band power module with an associated power gain of 21.5 dB
, The power module consists of a driver amplifier and tno power amplif
ier chips, These monolithic millimeter-wave integrated (MMIC) amplifie
rs were fabricated with a 2-mil-thick substrate using 0.15-mu m InGaAs
/AlGaAs/GaAs high electron mobility transistor (HEMT) technology, The
driver amplifier is a fully matched single-ended design with an output
power of 27.5 dBm, a 10.7-dB power gain and 27% PAE. We use a hybrid
approach for the output power amplifier, which consists of two partial
ly matched MMIC chips and an eight-way Wilkinson combiner fabricated o
n Alumina substrate. The MMIC power amplifiers delivered a record powe
r of 35.4 dBm (3.5 W) with a PAE of 28% and an associated power gain o
f 11.5 dB, The eight-way combiner has an insertion loss of 0.6 dB.