Q. Cai et al., HBT HIGH-FREQUENCY MODELING AND INTEGRATED PARAMETER EXTRACTION, IEEE transactions on microwave theory and techniques, 45(12), 1997, pp. 2493-2502
This paper presents, for the first time, a novel nonlinear model for a
ccurate dc, small-signal, and noise characterization of AlGaAs-GaAs he
terojunction bipolar transistors (HBT's). A new set of equations are i
ntroduced to take into account the bias, temperature, and frequency de
pendencies in noise calculations, This model provides significant impr
ovement in predicting small-signal noise for HBT-based circuits, We al
so present an integrated method for accurate HBT model parameter extra
ction by fitting the de, multibias s-parameter, and noise measurements
simultaneously. The extracted model provides accurate small-signal, d
e current, and noise characteristics. This technique is general and ca
n be used for parameter extraction of other microwave devices such as
MESFET's and high electron mobility transistors (HEMT's), Our new HBT
model is validated using devices from different foundries, An integrat
ed parameter extraction technique is demonstrated for a foundry HBT an
d excellent results are obtained.