HBT HIGH-FREQUENCY MODELING AND INTEGRATED PARAMETER EXTRACTION

Citation
Q. Cai et al., HBT HIGH-FREQUENCY MODELING AND INTEGRATED PARAMETER EXTRACTION, IEEE transactions on microwave theory and techniques, 45(12), 1997, pp. 2493-2502
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189480
Volume
45
Issue
12
Year of publication
1997
Part
2
Pages
2493 - 2502
Database
ISI
SICI code
0018-9480(1997)45:12<2493:HHMAIP>2.0.ZU;2-I
Abstract
This paper presents, for the first time, a novel nonlinear model for a ccurate dc, small-signal, and noise characterization of AlGaAs-GaAs he terojunction bipolar transistors (HBT's). A new set of equations are i ntroduced to take into account the bias, temperature, and frequency de pendencies in noise calculations, This model provides significant impr ovement in predicting small-signal noise for HBT-based circuits, We al so present an integrated method for accurate HBT model parameter extra ction by fitting the de, multibias s-parameter, and noise measurements simultaneously. The extracted model provides accurate small-signal, d e current, and noise characteristics. This technique is general and ca n be used for parameter extraction of other microwave devices such as MESFET's and high electron mobility transistors (HEMT's), Our new HBT model is validated using devices from different foundries, An integrat ed parameter extraction technique is demonstrated for a foundry HBT an d excellent results are obtained.