NONLINEAR MODELING OF SIGE HBTS UP TO 50 GHZ

Authors
RHEINFELDER CN BEISSWANGER FJ HEINRICH W
Citation
Cn. Rheinfelder et al., NONLINEAR MODELING OF SIGE HBTS UP TO 50 GHZ, IEEE transactions on microwave theory and techniques, 45(12), 1997, pp. 2503-2508
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
45
Issue
12
Year of publication
1997
Part
2
Pages
2503 - 2508
Database
ISI
SICI code
0018-9480(1997)45:12<2503:NMOSHU>2.0.ZU;2-R
Abstract
A new large-signal model for SiGe heterostructure bipolar transistors (HBT's) is presented that includes nonideal leakage currents, Kirk-eff ect, and thermal behavior, The parameters are extracted from S-paramet er measurements using a special procedure which is insensitive to tole rances in measurement data, The model yields excellent accuracy for de and S parameters up to 50 GHz, It proved its usefulness in MMIC oscil lator design at 26 and 38 GHz.