ROOM-TEMPERATURE PERSISTENT PHOTOCONDUCTIVITY IN GAP-S

Authors
ZARDAS GE THEODOROU DE EUTHYMIOU PC SYMEONIDES CI RIESZ F SZENTPALL B
Citation
Ge. Zardas et al., ROOM-TEMPERATURE PERSISTENT PHOTOCONDUCTIVITY IN GAP-S, Solid state communications, 105(2), 1998, pp. 77-79
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
105
Issue
2
Year of publication
1998
Pages
77 - 79
Database
ISI
SICI code
0038-1098(1998)105:2<77:RPPIG>2.0.ZU;2-H
Abstract
The build-up and the decay of persistent photoconductivity (PP) have b een measured at room temperature in GaP. The PP effect in our samples is attributed to the existence of defect clusters in the bulk material . Irradiation of the samples with a-particles generates defect cluster s and enhances further the PP effect. Persistent photoconductivity at room temperature may have technical applications i.e. photon dose mete rs and image storage. (C) 1997 Elsevier Science Ltd.