SURFACE-REACTIONS AND KINETIC PHENOMENA IN MOLECULAR LAYER EPITAXY OFIII-V SEMICONDUCTOR COMPOUNDS

The surface reactions and kinetic phenomena of GaAs mono-molecular lay er growth by using chemical adsorption of Ga(CH3)(3) (trimethylgallium (TMG)) and arsine (AsH3) were investigated. The monolayer growth on G aAs(100) was investigated as a parameter of injection duration, inject ion pressure, and evacuation duration of TMG and AsH3 in an ultra-high vacuum system to confirm the monolayer growth of the GaAs film. It ha s been found that the growth rate per cycle was strongly influenced by the surface stoichiometry of arsenic during growth. The characteristi c growth mode which is not only an exact monolayer growth but may also be below and over monolayer growth is discussed. Subsequently, in-sit u analysis of monolayer growth by using mass spectrometry during monol ayer growth is presented. As a result, it has been concluded that the adsorption species might be GaCH3 under monolayer growth conditions. T he model of the surface reaction in monolayer growth was deduced and d iscussed. (C) 1997 Elsevier Science S.A.