MBE GROWTH OF LATTICE-MATCHED AND MISMATCHED FILMS ON NON-(001) GAAS SUBSTRATES

There has recently been great interest in growth by molecular beam epi taxy of GaAs films on non-(001) oriented GaAs substrates. This has occ urred largely because of the possibility of fabricating novel device s tructures such as quantum wires and quantum boxes using patterned subs trates, However, the growth of high quality lattice matched and mismat ched structures on non-(001) GaAs substrates has had a reputation amon gst many researchers of being 'difficult'. Epitaxial layers grown on t hese surfaces have generally had poor surface morphology, bad crystall ine quality and irreproducible dopant incorporation behaviour. In this paper we will show that the growth of these materials is not 'difficu lt', but 'different' and that provided suitable growth conditions are used then high quality layers may be deposited on all substrate orient ations, As an illustration we will use reflection high energy electron diffraction to predict the conditions for high quality growth GaAs on the GaAs(111)A. We will then extend this to the mismatched (InGa)As:G aAs(111)A system. (C) 1997 Elsevier Science S.A.