MONTE-CARLO SIMULATION OF GE ON SI(111) MBE GROWTH - ANALYSIS OF PERCOLATIVE STRUCTURE

Authors
DANILUK A MAZUREK P PAPROCKI K MIKOLAJCZAK P
Citation
A. Daniluk et al., MONTE-CARLO SIMULATION OF GE ON SI(111) MBE GROWTH - ANALYSIS OF PERCOLATIVE STRUCTURE, Thin solid films, 306(2), 1997, pp. 220-223
Citations number
18
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
306
Issue
2
Year of publication
1997
Pages
220 - 223
Database
ISI
SICI code
0040-6090(1997)306:2<220:MSOGOS>2.0.ZU;2-M
Abstract
Reflection high energy electron diffraction (RHEED) intensity oscillat ions were observed during molecular beam epitaxy (MBE) growth of Ge on Si(111) surface. At 250 degrees C the oscillations continue up to 6 m onolayers. The intensity of the reflected beam is calculated by solvin g the one-dimensional Schrodinger equation. Monte-Carlo simulation was used for the growth simulation in order to investigate fundamental be haviours of reflectivity chan during the Stranski-Krastanov growth of Ge on the Si(111) surface at 250 degrees C. (C) 1997 Elsevier Science S.A.