GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SI SIGE/SI HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/

Citation
Te. Whall et Ehc. Parker, GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SI SIGE/SI HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/, Thin solid films, 306(2), 1997, pp. 338-345
Citations number
30
Journal title
ISSN journal
00406090
Volume
306
Issue
2
Year of publication
1997
Pages
338 - 345
Database
ISI
SICI code
0040-6090(1997)306:2<338:GACOPS>2.0.ZU;2-K
Abstract
A review of some important parameters relating to the performance of p seudomorphic Si/SiGe/Si p-channel MOS field-effect transistors is give n. The problems of Ge matrix element and B and Sb dopant segregation, in growing suitable layer structures to optimise device performance, a re discussed and some appropriate growth strategies are indicated. (C) 1997 Elsevier Science S.A.