Te. Whall et Ehc. Parker, GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SI SIGE/SI HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/, Thin solid films, 306(2), 1997, pp. 338-345
A review of some important parameters relating to the performance of p
seudomorphic Si/SiGe/Si p-channel MOS field-effect transistors is give
n. The problems of Ge matrix element and B and Sb dopant segregation,
in growing suitable layer structures to optimise device performance, a
re discussed and some appropriate growth strategies are indicated. (C)
1997 Elsevier Science S.A.