GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SI SIGE/SI HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/

A review of some important parameters relating to the performance of p seudomorphic Si/SiGe/Si p-channel MOS field-effect transistors is give n. The problems of Ge matrix element and B and Sb dopant segregation, in growing suitable layer structures to optimise device performance, a re discussed and some appropriate growth strategies are indicated. (C) 1997 Elsevier Science S.A.