QUANTUM EFFICIENCY AND ADMITTANCE SPECTROSCOPY ON CU(IN,GA)SE-2 SOLAR-CELLS

Citation
J. Parisi et al., QUANTUM EFFICIENCY AND ADMITTANCE SPECTROSCOPY ON CU(IN,GA)SE-2 SOLAR-CELLS, Solar energy materials and solar cells, 50(1-4), 1998, pp. 79-85
Citations number
6
Categorie Soggetti
Energy & Fuels","Material Science
ISSN journal
09270248
Volume
50
Issue
1-4
Year of publication
1998
Pages
79 - 85
Database
ISI
SICI code
0927-0248(1998)50:1-4<79:QEAASO>2.0.ZU;2-#
Abstract
We investigate the electronic transport properties of Cu(In,Ga)Se-2 so lar cells by means of quantum efficiency and temperature dependent adm ittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the Cd S buffer layer and in the Cu(In,Ga)Se-2 absorber. By admittance spectr oscopy, we find that the controlled incorporation of Na into the absor ber material leads to a shallow acceptor state at about 75 meV above t he valence band.