RADIATION DEGRADATION OF LARGE FLUENCE IRRADIATED SPACE SILICON SOLAR-CELLS

In this paper, we present data on the electrical properties of 50 mu m thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10(13) p/cm(2) and irradiated with 1 MeV electro ns with a fluence exceeding I x 10(16) e/cm(2), and discuss the anomal ous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carri er density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the la rge-fluence irradiation.