PHOTOTHERMAL CHARACTERIZATION OF ELECTROCHEMICAL ETCHING PROCESSED N-TYPE POROUS SILICON

Authors
CALDERON A ALVARDOGIL JJ GUREVICH YG CRUZOREA A DELGADILLO I VARGAS H MIRANDA LCM
Citation
A. Calderon et al., PHOTOTHERMAL CHARACTERIZATION OF ELECTROCHEMICAL ETCHING PROCESSED N-TYPE POROUS SILICON, Physical review letters, 79(25), 1997, pp. 5022-5025
Citations number
21
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
79
Issue
25
Year of publication
1997
Pages
5022 - 5025
Database
ISI
SICI code
0031-9007(1997)79:25<5022:PCOEEP>2.0.ZU;2-C
Abstract
The room temperature thermal diffusivity evolution of electrochemicall y formed porous silicon as a function of the etching time is investiga ted, The measurements were carried out using the open-cell photoacoust ic technique; The experimental data were analyzed using a composite tw o-layer model. The results obtained strongly support the existing stud ies, indicating the presence of a high percentage of SiO2 in the compo sition of porous silicon material.