SELECTIVE ABSORBERS BASED ON ALCUFE THIN-FILMS

Citation
T. Eisenhammer et al., SELECTIVE ABSORBERS BASED ON ALCUFE THIN-FILMS, Solar energy materials and solar cells, 46(1), 1997, pp. 53-65
Citations number
44
Categorie Soggetti
Energy & Fuels","Material Science
ISSN journal
09270248
Volume
46
Issue
1
Year of publication
1997
Pages
53 - 65
Database
ISI
SICI code
0927-0248(1997)46:1<53:SABOAT>2.0.ZU;2-D
Abstract
AlCuFe films of different thicknesses were ion beam sputter deposited onto substrates held at temperatures of 480-490 degrees C. Composition of the films was measured with elastic recoil detection and found to be Al62Cu25Fe13. X-ray diffraction of AlCuFe films approximate to 200 nm thick showed that these films consist of a mixture of quasicrystall ine and crystalline phases. Selective absorbers were produced by depos ition of sandwich systems of 50 nm Al2O3/10-12 nm AlCuFe/70 nm Al2O3 o n a copper film on Al2O3 coated Si-wafers. A solar absorptance of 90% was achieved, while the near normal directional emittance measured af room temperature is about 2.5%. Optical constants and DC-resistivity d ata of the AlCuFe films are reported.