AlCuFe films of different thicknesses were ion beam sputter deposited
onto substrates held at temperatures of 480-490 degrees C. Composition
of the films was measured with elastic recoil detection and found to
be Al62Cu25Fe13. X-ray diffraction of AlCuFe films approximate to 200
nm thick showed that these films consist of a mixture of quasicrystall
ine and crystalline phases. Selective absorbers were produced by depos
ition of sandwich systems of 50 nm Al2O3/10-12 nm AlCuFe/70 nm Al2O3 o
n a copper film on Al2O3 coated Si-wafers. A solar absorptance of 90%
was achieved, while the near normal directional emittance measured af
room temperature is about 2.5%. Optical constants and DC-resistivity d
ata of the AlCuFe films are reported.