MOS CAPACITOR HOLDING TIME AND DIFFUSION LENGTH AT DRAM REFRESH TEST TEMPERATURE

In this paper, we show that the minority-carrier diffusion length in t he neutral region of MOS capacitors can be measured using some refinem ents to the original method given by D.K. Schroder [2] even at tempera tures for which the leakage current is not exclusively due to the diff usion current. This is the case at the temperature used for the test o f DRAM refresh time (80-85 degrees C). For this temperature, we have v erified that the MOS capacitor holding time is a linear function of th e minority carrier diffusion length.