PHOTOLUMINESCENCE INVESTIGATION OF SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON NON-(100) ORIENTED SURFACES

Authors
PAVESI L HENINI M
Citation
L. Pavesi et M. Henini, PHOTOLUMINESCENCE INVESTIGATION OF SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON NON-(100) ORIENTED SURFACES, Microelectronics, 28(8-10), 1997, pp. 717-726
Citations number
18
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
28
Issue
8-10
Year of publication
1997
Pages
717 - 726
Database
ISI
SICI code
0026-2692(1997)28:8-10<717:PIOSGG>2.0.ZU;2-M
Abstract
The photoluminescence of Si-doped GaAs grown by molecular beam epitaxy on non-(100) oriented surfaces will be presented and reviewed. Partic ular care will be paid to show how photoluminescence can help the unde rstanding of the behaviour of the dopants, unwanted impurities and poi nt defects in differently oriented samples. Low temperature continuous -wave and time resolved luminescence data will be presented of (100), (111)A, (111)B, (211)A, (311)A, (311)B and (110) oriented samples with different doping levels. (C) 1997 Elsevier Science Ltd.