M. Wachter et al., ANISOTROPIC SURFACE-DIFFUSION AT CRYSTAL FACET TRANSITIONS DURING LOCALIZED GA-IN-AS-P GROWTH BY MOMBE, Microelectronics, 28(8-10), 1997, pp. 841-848
Localized grown InP/GaInAs(P) heterostructure ridges by selective area
metalorganic molecular beam epitaxy (MOMBE) are investigated concerni
ng the surface diffusion. The structures have different crystal facets
at the semiconductor mask transition area. The surface diffusion proc
esses between these simultaneously growing facets are a function of th
e step density, which is preset by the selected substrate misorientati
ons. The anisotropic surface diffusion in the direction of the group V
terminated surface steps determines the lateral facet growth and lead
s to a fine oscillating surface corrugation on the ridge surface only
near the step upwards oriented facet transition. A simulation of this
anisotropic surface corrugation by a deterministic nonlinear partial d
ifferential equation of a one dimensional diffusion model for the sele
ctive area growth in MOMBE presents a good agreement with the measured
corrugation depth and periods. (C) 1997 Elsevier Science Ltd.