GAINAS INP QUANTUM WIRES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ONV-GROOVED INP SUBSTRATES/

A single nominally lattice matched GaInAs quantum well (QW)/quantum wi re (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVP E) in V-grooved InP substrates. Different SiO2 etch masks with opening widths from 2 mu m down to 200 nm (for application as second order DF B grating) were defined by optical and electron beam lithography. A da mage-reduced wet chemical etching process enables the growth of the Ga InAs QWs/QWRs without any InP buffer layer. In low temperature photolu minescence we found improved intensity for all wire structures prepare d by this etching technique. A reduction of the period and opening wid th of the V-groove etch mask resulted in a optimized luminescence inte nsity ratio between QW and QWR. Decay times from time resolved lumines cence measurements were compared to the decay times of wet or dry etch ed mesa wires before and after regrowth. The good optical properties o f the GaInAs QWRs are encouraging for future application as a QWR-lase r device. (C) 1997 Elsevier Science Ltd.