THE GROWTH OF (INGA)AS QUANTUM-WELLS ON GAAS(111)A, (211)A AND (311)ASUBSTRATES

The ability to grow high quality (InGa)As on the (111)A surface is ess ential for the production of a wide range of optoelectronic devices, b ut the topic has so far received little attention. What work there has been shows it to be highly problematic, reflected in the very broad p hotoluminescence (PL) peaks observed for GaAs:(InGa)As multiple quantu m well structures. The origin of this broadening is unclear but is cer tainly related to the difficulty in choosing appropriate conditions fo r the growth of III-Vs on the (111)A surface. We have undertaken a stu dy of the growth of (InGa)As on the GaAs(111)A, (211)A and (311)A surf aces with the goal of achieving high quality quantum well structures, the test being the ability to obtain narrow PL line widths. We have de monstrated that 80 Angstrom 15% InGaAs(111)A single quantum wells with 12K PL peak widths of less than 8 meV can be obtained by growth at 40 0 degrees C under a V:III ratio of 5:1. (C) 1997 Elsevier Science Ltd.