PIEZOELECTRIC EFFECT IN MICROMACHINED [001] QUANTUM-WELLS - THEORETICAL ASPECTS

Authors
RINCON R PRIESTER C FIERLING G LETARTRE X VIKTOROVITCH P
Citation
R. Rincon et al., PIEZOELECTRIC EFFECT IN MICROMACHINED [001] QUANTUM-WELLS - THEORETICAL ASPECTS, Microelectronics, 28(8-10), 1997, pp. 1031-1035
Citations number
9
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
28
Issue
8-10
Year of publication
1997
Pages
1031 - 1035
Database
ISI
SICI code
0026-2692(1997)28:8-10<1031:PEIM[Q>2.0.ZU;2-F
Abstract
In this work, we demonstrate the ability to take advantage of the piez oelectric effect in systems primarily grown on [001] GaAs substrates. Such an effect can be achieved by making use of elastic relaxation of micromachined strained quantum well structures, the etching direction being carefully chosen. Shear deformations present at the edge of rele ased cantilevers can produce a significant piezoelectric field. (C) 19 97 Elsevier Science Ltd.