We have investigated the growth of heterostructures with high lattice
mismatch and the growth of quantum wires on the top of ridges and thro
ugh shadowing masks. Simulations are performed within a Monte Carlo sc
heme using tetrahedral lattice structure of semiconductor materials. I
t is shown that results of different simulations present similarities
that we attribute to the primary role of kinetic effects as the drivin
g force during epitaxial growth. The formation of 3D islands showing (
111) facets, or (111) side walls when depositing through a shadowing m
ask, has been observed. The facets are of better quality than the top
(001) surface because of the higher mobility of atoms on these facets.
(C) 1997 Elsevier Science Ltd.