STRAIN-COMPENSATED INGA(AS)P-INASP ACTIVE REGIONS FOR 1.3-MU-M WAVELENGTH LASERS

The demonstration of an optimized strain-compensated multiple-quantum- well (MQW) active region for use in 1.3-mu m wavelength lasers is desc ribed, Utilizing narrow bandgap tensile-strained InGaAsP instead of wi de bandgap InGaP barriers in strain-compensated lasers, we observe a r eduction in threshold current density (J(th)) from 675 to 310 A/cm(2) and in T-o from 75 K to 65 K for 2-mm long seven quantum-well devices, Additionally, the lowest reported Jth for MBE grown 1.3-mu m waveleng th lasers of 120 A/cm(2) for single-quantum-well (SQW) 4,5-mm-long las ers was attained.