OPTOELECTRONIC PROPERTIES OF SEXITHIOPHENE SINGLE-CRYSTALS

UV-Vis absorption, photoluminescence (PL) and photoconductivity (PC) m easurements have been carried out on sexithiophene (alpha 6T) single c rystals grown from the vapor phase. UV-Vis absorption data were used t o determine the absorption coefficient and refraction index under pola rized light. The spectrum at polarization perpendicular to the unique axis b is similar to that measured on polycrystalline films, whereas t hat at light polarized parallel to b presents a weak structured absorp tion. The refractive index is 1.656, independent of the wavelength, un der parallel polarization, and follows the Sellmeier equation, with n( infinity) = 1.867, under perpendicular polarization. The PL excitation spectrum with parallel polarization follows exactly the corresponding weak absorption, whereas, at perpendicular polarization, it saturates when the absorption length compares the crystal thickness, and then d ecreases down to a minimum at 3.5 eV. This lowering mirrors a decrease of the PL yield at higher energies. The PC action spectrum shows an o pposite behavior: it presents first a rise at 2.4 eV, parallel to the absorption onset, then a second rise at 3.0 eV up to a maximum at 3.3 eV. The first rise corresponds to the generation of singlet excitons, which then give birth to charges, through either exciton breaking, or more likely charge detrapping. The second rise could correspond to a d irect ionization process. The magnetic field effect on PC has been stu died. A relative decrease of up to 6% at a field of 4000 G has been de tected. The decrease is attributed to the lowering of the triplet-doub let interaction constant R. (C) 1997 Elsevier Science S.A.