IONIC IMPLANTATION AT LOW-ENERGY - APPLICATION TO THE SHALLOW JUNCTION ACCOMPLISHMENT AND SURFACE FUNCTIONALIZATION

The proposed work deals with rapid thermal processing of ionic boron ( B-11(+)) and boron difluoride (BF2+) implanted in phosphorus-doped Cz- (100) silicon substrates through protecting oxide films, under differe nt technological parameters. After implantation, the samples were rapi dly thermally annealed at temperatures ranging from 900 to 1100 degree s C, in argon ambient gas, for different annealing durations. The rapi d thermal annealings (RTAs) are carried out also, for some samples, af ter oxide mask removal. The total boron, fluorine as well as oxygen co ncentrations versus depth profiles, before and after annealing steps, in the SiO2/Cz-(100) silicon systems were determined using secondary i on mass spectrometry (SIMS). Using a background concentration, the jun ction depth in the substrate has been investigated under different ann ealing experimental conditions. The kinetic diffusion process of impla nted boron into oxide and monocrystalline silicon during rapid thermal treatments has also been investigated. The reported results show that boron diffusion in the BF2+ case is widely reduced during rapid therm al treatments. Discussions of this are based on the effect of both kno cked-on oxygen and fluorine on the boron diffusion kinetics. (C) 1997 Elsevier Science S.A.