A STUDY OF INP(100) SURFACE PASSIVATION BY ANTIMONY DEPOSITION

InP(100) is a promising substrate for microelectronic and optoelectron ic devices due to its high mobility. Sb atomic condensation induces th e formation of some InSb overlayers that produce passivation of the su rface. First steps of the mechanism have been studied at atomic scale using synchrotron radiation. The process of InSb formation is due to a 3D-2D phase transformation, In this work we also point out the effect of the sample heating. Results are in good agreement with previous on es obtained by Auger electron spectroscopy (AES) and electron energy l oss spectroscopy (EELS). We have obtained a good stabilization of the surface with respect to any prolonged heating up to 450 degrees C. The size of the In or Sb clusters decreases with temperature: the InSb mo nolayer becomes almost stoichiometric at 450 degrees C. The substrate has also a good quality for an optimum behavior of electronic componen ts (L. Bideux, B. Gruzza, A. Porte and H. Robert, Surf. Interface Anal ., 20 (1993) 803-807). (C) 1997 Elsevier Science S.A.