RESPONSE OF CONVERTER SEMICONDUCTOR-DETECTORS ON NEUTRON RADIATION

Active detectors based on Si semiconductors are being developed for in dividual radiation protection purposes in mixed neutron and photon fie lds. These devices are constructed as combined converter semiconductor detectors. Incident neutrons interact with the converter or detector nuclei and produce charged particles that can deposit energy in the se miconductor and cause a signal. The aim of this work is the determinat ion of the response of such detectors to incident neutrons by experime nt and by computation. The computer model consists of the neutron inte raction simulation and the calculation of the ion transport. An analys is of measured and computed pulse height distributions for 5 MeV incid ent neutrons is presented as well as a comparison.