LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS

Authors
TARBAEV NI SHEPELSKII GA SALKOV EA
Citation
Ni. Tarbaev et al., LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS, JETP letters, 66(10), 1997, pp. 675-680
Citations number
9
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
66
Issue
10
Year of publication
1997
Pages
675 - 680
Database
ISI
SICI code
0021-3640(1997)66:10<675:LMODAA>2.0.ZU;2-Y
Abstract
A new mechanism is proposed for the formation of one-dimensional elect ronic structures in semiconductor crystals. The mechanism is based on controllable low-temperature glide of dislocations. Moving dislocation s generate associations of intrinsic point defects in the form of one- dimensional chains, and the decay of the associations is impeded by lo w temperature. Experimental results and numerical estimates are presen ted for cadmium sulfide crystals. (C) 1997 American Institute of Physi cs.