A DEEP-SUBMICRON SI1-XGEX SI VERTICAL PMOSFET FABRICATED BY GE ION-IMPLANTATION/

Ve report a deep submicron vertical PMOS transistor using strained Si1 -xGex channel formed by Ge ion implantation and solid phase epitaxy, T hese vertical structure Si1-xGex/Si transistors can be fabricated with channel lengths below 0.2 mu m without using any sophisticated lithog raphic techniques and with a regular MOS process, The enhancement of h ole mobility in a direction normal to the growth plane of strained Si1 -xGex over that of bulk Si has been experimentally demonstrated for th e first time using this vertical MOSFET. The drain current of these ve rtical MOS devices has been found to be enhanced by as much as 100% ov er control Si devices, The presence of the built-in electric field due to a graded SiGe channel has also been found to be effective in furth er enhancement of the drive current in implanted-channel MOSFET's.